The boron-oxygen complexes can be activated by irradiating the sample with light and deactivated by heating the sample at 200 °C for several minutes. This can be used similar to the iron determination, to determine the relative boron-oxygen density by lifetime measurements before and after the activation and deactivation of the defect complex.
The boron-oxygen density is determined via:
\([BO_{2}] = C_{BO}(\Delta n) \cdot (\cfrac{1}{\tau_{BO}} - \cfrac{1}{\tau_{FeB}})\)
For the boron-oxygen determination a calibration factor CBO is used, which depends on the injection and doping concentration. With the MDPmap and the heated sample stage a determination of the boron-oxygen concentration is possible for mc- and mono-Si with a high resolution.
Related Solutions and Industries: Epitaxial Layers & Thin Films
