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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
Low cost table top single spot measurements on wafers or bricks.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different preparation stages, without built-in automatization. Optional hand operated z-axis for thicker samples up to 156 mm bricks. Standard software for result visualization.
MDPspot wIncludes an additional resistivity measurement option. Resistivity measurements for silicon only, either for wafers without height adjustment possibility, or for bricks. One of these two options has to be predefined.
contactless destruction free electrical semiconductor characterisation
μ-PCD measurement option included
advanced sensitivity for visualisation of so far invisible defects and investigations of epitaxial layers
integration of up to four lasers for a wide range of injection levels
access to primary data of single transients as well as maps for special evaluation purposes
Spot size variation
Resistivity measurement (wafers)
Reflection measurement (MDP)
Contact us for more information.
Table top unit for single point measurements of carrier lifetime, multi- or mono-crystalline silicon at different preparation stages, from as- grown up to final devices.
Small size, low cost and easy to use. Comes with a basic software for result visualisation on a small PC or notebook.
Suitable for wafers up to bricks, with easy to handle height adjustment.
allows for single wafer investigation
different recipes for different wafer classes
monitoring of material, process quality and stability
The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the iron concentration as exactly and fast as possible, with a very high resolution and preferably inline.
Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the necessary annealing steps. The difficulties so far...
Trapping centers are very important, in order to understand the behavior of carriers in the material and can also have an effect on solar cells. Hence it is desirable to measure the trap density and the activation energy of these trap centers with a high resolution.
The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.